TY - JOUR
T1 - Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy
AU - Nagashima, Toru
AU - Harada, Manabu
AU - Yanagi, Hiroyuki
AU - Fukuyama, Hiroyuki
AU - Kumagai, Yoshinao
AU - Koukitu, Akinori
AU - Takada, Kazuya
PY - 2007/7/15
Y1 - 2007/7/15
N2 - We have demonstrated that high-quality aluminium nintride (AlN) single crystal can be grown at high growth rates by hydride vapor phase epitaxy (HVPE) with a help of using AlN templates and step growth technique. A colorless and transparent AlN layer with 83 μm thick was grown at a growth rate of 57 μm/h at 1450 °C. Its full-width at half-maximum for {0 0 0 2} plane was 295 arcsec and that for {1 0 1̄ 1} plane was 432 arcsec. Grown AlN layer was transparent in the visible and ultraviolet region and a sharp absorption edge with band gap energy of 5.96 eV was confined.
AB - We have demonstrated that high-quality aluminium nintride (AlN) single crystal can be grown at high growth rates by hydride vapor phase epitaxy (HVPE) with a help of using AlN templates and step growth technique. A colorless and transparent AlN layer with 83 μm thick was grown at a growth rate of 57 μm/h at 1450 °C. Its full-width at half-maximum for {0 0 0 2} plane was 295 arcsec and that for {1 0 1̄ 1} plane was 432 arcsec. Grown AlN layer was transparent in the visible and ultraviolet region and a sharp absorption edge with band gap energy of 5.96 eV was confined.
KW - A1. Crystal structure
KW - A3. Hydride vapor phase epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting aluminum compounds
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U2 - 10.1016/j.jcrysgro.2007.04.001
DO - 10.1016/j.jcrysgro.2007.04.001
M3 - Article
AN - SCOPUS:34347344893
SN - 0022-0248
VL - 305
SP - 355
EP - 359
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2 SPEC. ISS.
ER -