TY - JOUR
T1 - Improvement of electrical property for Pb(Zr0.53Ti 0.47)O3 ferroelectric thin film deposited by sol-gel method on SRO electrode
AU - Hung, Vu Ngoc
AU - Minh, Le Van
AU - Huyen, Bui Thi
AU - Minh, Nguyen Duc
PY - 2009
Y1 - 2009
N2 - Pb(Zr,Ti)O3 thin films with Zr/Ti ratio of 53:47 were deposited on SRO/YSZ/Si(100) and Pt/Ti/SiO2/Si(100) substrates using the sol-gel method. The thermal process of the PZT thin films included treating two-step pyrolysis, at 300°C for 30 minutes and 400°C for 10 minutes, and annealing crystallization, at 600°C for 10 minutes in air ambient. The remnant polarization and the coercive field of the PZT/SRO/YSZ/Si were 28 μC/cm2 and 65 kV/cm2, and those of the PZT/Pt/Ti/SiO2/Si were 12 μC/cm2 and 79 kV/cm 2. This indicates that the use of the metallic SRO-electrodes significantly improves electrical property of PZT piezoelectric thin film as compared with a metal-electrode Pt.
AB - Pb(Zr,Ti)O3 thin films with Zr/Ti ratio of 53:47 were deposited on SRO/YSZ/Si(100) and Pt/Ti/SiO2/Si(100) substrates using the sol-gel method. The thermal process of the PZT thin films included treating two-step pyrolysis, at 300°C for 30 minutes and 400°C for 10 minutes, and annealing crystallization, at 600°C for 10 minutes in air ambient. The remnant polarization and the coercive field of the PZT/SRO/YSZ/Si were 28 μC/cm2 and 65 kV/cm2, and those of the PZT/Pt/Ti/SiO2/Si were 12 μC/cm2 and 79 kV/cm 2. This indicates that the use of the metallic SRO-electrodes significantly improves electrical property of PZT piezoelectric thin film as compared with a metal-electrode Pt.
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U2 - 10.1088/1742-6596/187/1/012063
DO - 10.1088/1742-6596/187/1/012063
M3 - Article
AN - SCOPUS:73349124785
SN - 1742-6588
VL - 187
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
M1 - 012063
ER -