Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

Y. Morita; T. Mori; S. Migita; W. Mizubayashi; K. Fukuda; T. Matsukawa; K. Endo; S. O'Uchi; Y. X. Liu; M. Masahara; H. Ota

doi:10.1109/ESSDERC.2014.6948790

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

Y. Morita, T. Mori, S. Migita, W. Mizubayashi, K. Fukuda, T. Matsukawa, K. Endo, S. O'Uchi, Y. X. Liu, M. Masahara, H. Ota

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Roberto Bez, Paolo Pavan, Gaudenzio Meneghesso
Publisher	IEEE Computer Society
Pages	182-185
Number of pages	4
ISBN (Electronic)	9781479943784
DOIs	https://doi.org/10.1109/ESSDERC.2014.6948790
Publication status	Published - 2014 Nov 5
Event	44th European Solid-State Device Research Conference, ESSDERC 2014 - Venezia Lido, Italy Duration: 2014 Sept 22 → 2014 Sept 26

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	44th European Solid-State Device Research Conference, ESSDERC 2014
Country/Territory	Italy
City	Venezia Lido
Period	14/9/22 → 14/9/26

Keywords

epitaxial growth
subthreshold slope
TFET

Access to Document

10.1109/ESSDERC.2014.6948790

Cite this

Morita, Y., Mori, T., Migita, S., Mizubayashi, W., Fukuda, K., Matsukawa, T., Endo, K., O'Uchi, S., Liu, Y. X., Masahara, M., & Ota, H. (2014). Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. In R. Bez, P. Pavan, & G. Meneghesso (Eds.), European Solid-State Device Research Conference (pp. 182-185). Article 6948790 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2014.6948790

Morita, Y. ; Mori, T. ; Migita, S. et al. / Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. European Solid-State Device Research Conference. editor / Roberto Bez ; Paolo Pavan ; Gaudenzio Meneghesso. IEEE Computer Society, 2014. pp. 182-185 (European Solid-State Device Research Conference).

@inproceedings{1ecc0ca399b042af90384cd60fcf9712,

title = "Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance",

abstract = "We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.",

keywords = "epitaxial growth, subthreshold slope, TFET",

author = "Y. Morita and T. Mori and S. Migita and W. Mizubayashi and K. Fukuda and T. Matsukawa and K. Endo and S. O'Uchi and Liu, {Y. X.} and M. Masahara and H. Ota",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 44th European Solid-State Device Research Conference, ESSDERC 2014 ; Conference date: 22-09-2014 Through 26-09-2014",

year = "2014",

month = nov,

day = "5",

doi = "10.1109/ESSDERC.2014.6948790",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "182--185",

editor = "Roberto Bez and Paolo Pavan and Gaudenzio Meneghesso",

booktitle = "European Solid-State Device Research Conference",

address = "United States",

}

Morita, Y, Mori, T, Migita, S, Mizubayashi, W, Fukuda, K, Matsukawa, T, Endo, K, O'Uchi, S, Liu, YX, Masahara, M & Ota, H 2014, Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. in R Bez, P Pavan & G Meneghesso (eds), European Solid-State Device Research Conference., 6948790, European Solid-State Device Research Conference, IEEE Computer Society, pp. 182-185, 44th European Solid-State Device Research Conference, ESSDERC 2014, Venezia Lido, Italy, 14/9/22. https://doi.org/10.1109/ESSDERC.2014.6948790

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. / Morita, Y.; Mori, T.; Migita, S. et al.
European Solid-State Device Research Conference. ed. / Roberto Bez; Paolo Pavan; Gaudenzio Meneghesso. IEEE Computer Society, 2014. p. 182-185 6948790 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

AU - Morita, Y.

AU - Mori, T.

AU - Migita, S.

AU - Mizubayashi, W.

AU - Fukuda, K.

AU - Matsukawa, T.

AU - Endo, K.

AU - O'Uchi, S.

AU - Liu, Y. X.

AU - Masahara, M.

AU - Ota, H.

PY - 2014/11/5

Y1 - 2014/11/5

N2 - We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.

AB - We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.

KW - epitaxial growth

KW - subthreshold slope

KW - TFET

UR - http://www.scopus.com/inward/record.url?scp=84911963788&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84911963788&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2014.6948790

DO - 10.1109/ESSDERC.2014.6948790

M3 - Conference contribution

AN - SCOPUS:84911963788

T3 - European Solid-State Device Research Conference

SP - 182

EP - 185

BT - European Solid-State Device Research Conference

A2 - Bez, Roberto

A2 - Pavan, Paolo

A2 - Meneghesso, Gaudenzio

PB - IEEE Computer Society

T2 - 44th European Solid-State Device Research Conference, ESSDERC 2014

Y2 - 22 September 2014 through 26 September 2014

ER -

Morita Y, Mori T, Migita S, Mizubayashi W, Fukuda K, Matsukawa T et al. Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. In Bez R, Pavan P, Meneghesso G, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2014. p. 182-185. 6948790. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2014.6948790

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this