@article{e8dd8b0d747843d7bd865afda9e0e75b,
title = "Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors",
abstract = "Abstract We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.",
author = "Yukinori Morita and Takahiro Mori and Shinji Migita and Wataru Mizubayashi and Koichi Fukuda and Takashi Matsukawa and Kazuhiko Endo and O'uchi, {Shin Ichi} and Yongxun Liu and Meishoku Masahara and Hiroyuki Ota",
note = "Funding Information: The work was supported by the Japan Society for the Promotion of Science through the First Program, “Development of Core Technologies for Green Nanoelectronics” initiated by the Council for Science and Technology Policy. The authors express their thanks to Dr. N. Yokoyama for useful discussions and encouragement. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",
year = "2015",
month = jul,
day = "20",
doi = "10.1016/j.sse.2015.05.031",
language = "English",
volume = "113",
pages = "173--178",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Ltd.",
}