Abstract
The high-temperature creep resistance in Al2O3 is improved greatly by ZrO2 doping. Zirconium ions are found to be segregated in Al2O3 grain boundaries. The activation energies for creep in high-purity Al2O3 and ZrO2-doped Al2O3 are estimated to be 430 and 650 kJ mol-1 respectively. The grain boundary diffusivity of Al ions is expected to be reduced by the segregation of Zr4+ in the grain boundaries.
Original language | English |
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Pages (from-to) | 9-14 |
Number of pages | 6 |
Journal | Philosophical Magazine Letters |
Volume | 76 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1997 Jul |
ASJC Scopus subject areas
- Condensed Matter Physics