@inproceedings{315f947412e0489eb763665c1a1ecab5,
title = "Improvement of local deep level transient spectroscopy for microscopic evaluation of SiO2/4H-SiC interfaces",
abstract = "We demonstrate our new local deep level spectroscopy system improved for more accurate analysis of trap states at SiO2/4H-SiC interfaces. Full waveforms of the local capacitance transient with the amplitude of attofarads and the time scale of microseconds were obtained and quantitatively analyzed. The local energy distribution of interface state density in the energy range of EC − Eit = 0.31–0.38 eV was obtained. Two-dimensional mapping of the interface states showed inhomogeneous contrasts with the lateral spatial scale of several hundreds of nanometers, suggesting that the physical origin of the trap states at SiO2/SiC interfaces is likely to be microscopically clustered.",
keywords = "4H-SiC, Density of interface states, DLTS, Microscopy, MOS interface",
author = "Yuji Yamagishi and Yasuo Cho",
note = "Funding Information: This study was supported by the Cross-ministerial Strategic Innovation Promotion Program (SIP) of the cabinet of Japan and the Grant-in-Aid for Scientific Research (S) (Grant No. 16H06360) from the Japan Society for the Promotion of Science. We appreciate Dr. R. Kosugi at the National Institute of Advanced Industrial Science and Technology (AIST) for supplying samples. Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 ; Conference date: 17-09-2017 Through 22-09-2017",
year = "2018",
doi = "10.4028/www.scientific.net/MSF.924.289",
language = "English",
isbn = "9783035711455",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "289--292",
editor = "Robert Stahlbush and Philip Neudeck and Anup Bhalla and Devaty, {Robert P.} and Michael Dudley and Aivars Lelis",
booktitle = "Silicon Carbide and Related Materials, 2017",
}