@inproceedings{5ae4281c03bf46e68f3ab8733e1773d5,
title = "Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma",
abstract = "MOSFET subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar-H2 plasma. This mixture was chosen since Ar plasma resulted in both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.",
keywords = "Gases, Hydrogen, Microwave generation, MOSFET circuits, Plasma applications, Plasma devices, Plasma measurements, Plasma properties, Subthreshold current, Surface cleaning",
author = "Y. Saito and H. Takahashi and Ohtsubo, {K. O.} and M. Hirayama and S. Sugawa and H. Aharoni and T. Ohmi",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 ; Conference date: 30-04-2001 Through 03-05-2001",
year = "2001",
doi = "10.1109/RELPHY.2001.922922",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "319--326",
booktitle = "2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual",
address = "United States",
}