TY - JOUR
T1 - Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma
AU - Saito, Y.
AU - Takahashi, H.
AU - Ohtsubo, K.
AU - Hirayama, M.
AU - Sugawa, S.
AU - Aharoni, H.
AU - Ohmi, T.
PY - 2001
Y1 - 2001
N2 - MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.
AB - MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.
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M3 - Conference article
AN - SCOPUS:0034984868
SN - 0099-9512
SP - 319
EP - 326
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
T2 - 39th Annual International Reliability Physics Symposium
Y2 - 30 April 2001 through 3 May 2001
ER -