MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.
|Number of pages||8|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|Publication status||Published - 2001|
|Event||39th Annual International Reliability Physics Symposium - Orlando, FL, United States|
Duration: 2001 Apr 30 → 2001 May 3