TY - JOUR
T1 - Improvements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE
AU - Takano, S.
AU - Sasaki, T.
AU - Yamada, H.
AU - Kitamura, M.
AU - Mito, I.
AU - Suzuki, T.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1988
Y1 - 1988
N2 - High quality InGaAs/InP quantum well structures and 1.5 μm MQW lasers, grown by low pressure MOVPE are reported. PL linewidth, PL peak energy shift, X-ray satellite peaks and transmission spectroscopy have demonstrated that the InGaAs/InP quantum wells were of high quality. The first improvements in T0 and resonance frequency in 1.5 μm MQW lasers are reported. Superior performances due to a quantum effect are: (1) high T0 value, 105 K (15-45°C), (2) large TE/TM mode gain difference, 45 cm-1 and (3) high resonance frequency, 4 GHz/mW 1 2.
AB - High quality InGaAs/InP quantum well structures and 1.5 μm MQW lasers, grown by low pressure MOVPE are reported. PL linewidth, PL peak energy shift, X-ray satellite peaks and transmission spectroscopy have demonstrated that the InGaAs/InP quantum wells were of high quality. The first improvements in T0 and resonance frequency in 1.5 μm MQW lasers are reported. Superior performances due to a quantum effect are: (1) high T0 value, 105 K (15-45°C), (2) large TE/TM mode gain difference, 45 cm-1 and (3) high resonance frequency, 4 GHz/mW 1 2.
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U2 - 10.1016/0022-0248(88)90631-8
DO - 10.1016/0022-0248(88)90631-8
M3 - Article
AN - SCOPUS:0024104445
SN - 0022-0248
VL - 93
SP - 857
EP - 862
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -