Improving reliability of IGBT surface electrode for 200 °c operation

Tomohiro Nishimura; Yoshinari Ikeda; Hiroaki Hokazono; Eiji Mochizuki; Yoshikazu Takahashi

doi:10.1109/IPEC.2014.6870088

Improving reliability of IGBT surface electrode for 200 °c operation

Tomohiro Nishimura, Yoshinari Ikeda, Hiroaki Hokazono, Eiji Mochizuki, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the -55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness of Ni played a key role to prevent mass transfer phenomena such as a migration of Al grain boundaries. We show that long P/C and T/C lifetime under high temperature operating condition can be achieved with the conventional IGBT module using our technique.

Original language	English
Title of host publication	2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Publisher	IEEE Computer Society
Pages	2870-2873
Number of pages	4
ISBN (Print)	9781479927050
DOIs	https://doi.org/10.1109/IPEC.2014.6870088
Publication status	Published - 2014 Jan 1
Externally published	Yes
Event	7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan Duration: 2014 May 18 → 2014 May 21

Publication series

Name	2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Other

Other	7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Country/Territory	Japan
City	Hiroshima
Period	14/5/18 → 14/5/21

Keywords

200 °C operation
barrier layer
reliability
surface electrode

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPEC.2014.6870088

Cite this

Nishimura, T., Ikeda, Y., Hokazono, H., Mochizuki, E., & Takahashi, Y. (2014). Improving reliability of IGBT surface electrode for 200 °c operation. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 (pp. 2870-2873). [6870088] (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). IEEE Computer Society. https://doi.org/10.1109/IPEC.2014.6870088

Improving reliability of IGBT surface electrode for 200 °c operation. / Nishimura, Tomohiro; Ikeda, Yoshinari; Hokazono, Hiroaki et al.
2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, 2014. p. 2870-2873 6870088 (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishimura, T, Ikeda, Y, Hokazono, H, Mochizuki, E & Takahashi, Y 2014, Improving reliability of IGBT surface electrode for 200 °c operation. in 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014., 6870088, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, IEEE Computer Society, pp. 2870-2873, 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, Hiroshima, Japan, 14/5/18. https://doi.org/10.1109/IPEC.2014.6870088

Nishimura T, Ikeda Y, Hokazono H, Mochizuki E, Takahashi Y. Improving reliability of IGBT surface electrode for 200 °c operation. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society. 2014. p. 2870-2873. 6870088. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). doi: 10.1109/IPEC.2014.6870088

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title = "Improving reliability of IGBT surface electrode for 200 °c operation",

abstract = "The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the -55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness of Ni played a key role to prevent mass transfer phenomena such as a migration of Al grain boundaries. We show that long P/C and T/C lifetime under high temperature operating condition can be achieved with the conventional IGBT module using our technique.",

keywords = "200 °C operation, barrier layer, reliability, surface electrode",

author = "Tomohiro Nishimura and Yoshinari Ikeda and Hiroaki Hokazono and Eiji Mochizuki and Yoshikazu Takahashi",

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AU - Mochizuki, Eiji

AU - Takahashi, Yoshikazu

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N2 - The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the -55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness of Ni played a key role to prevent mass transfer phenomena such as a migration of Al grain boundaries. We show that long P/C and T/C lifetime under high temperature operating condition can be achieved with the conventional IGBT module using our technique.

AB - The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the -55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness of Ni played a key role to prevent mass transfer phenomena such as a migration of Al grain boundaries. We show that long P/C and T/C lifetime under high temperature operating condition can be achieved with the conventional IGBT module using our technique.

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Improving reliability of IGBT surface electrode for 200 °c operation

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Keywords

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