Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSix for via-last TSV technology

Murugesan Mariappan; Jichel Bea; Takafumi Fukushima; Makoto Motoyoshi; Tetsu Tanaka; Mitsumasa Koyanagi

doi:10.1109/3DIC.2016.7970017

Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSi_x for via-last TSV technology

Murugesan Mariappan, Jichel Bea, Takafumi Fukushima, Makoto Motoyoshi, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

With in the process temperature limit of less than 400 °C for via last technology, a simple method to improve the barrier ability of Ti layer in through Si via (TSV) has been studied. After annealing the TSV structures in vacuum at temperatures up to 400 °C, we did observe a tremendous improvement in leak current characteristics for SiO² dielectric. It was found that the self-formed TiSi_x at the interface between Cu and SiO₂ during the sputter deposition of Ti barrier layer was converted into an amorphous TiO^x and SiO^x upon vacuum annealing. This simple vacuum annealing of Cu-TSVs is a promising approach for using Ti as barrier layer in via-last 3D-integration.

Original language	English
Title of host publication	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509013999
DOIs	https://doi.org/10.1109/3DIC.2016.7970017
Publication status	Published - 2017 Jul 5
Event	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 - San Francisco, United States Duration: 2016 Nov 8 → 2016 Nov 11

Publication series

Name	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

Conference

Conference	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
Country/Territory	United States
City	San Francisco
Period	16/11/8 → 16/11/11

Keywords

Cu-TSV
Ti Barrier layer
XPS

Access to Document

10.1109/3DIC.2016.7970017

Cite this

Mariappan, M., Bea, J., Fukushima, T., Motoyoshi, M., Tanaka, T., & Koyanagi, M. (2017). Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSi_x for via-last TSV technology. In 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 Article 7970017 (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC.2016.7970017

Mariappan, Murugesan ; Bea, Jichel ; Fukushima, Takafumi et al. / Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSi_x for via-last TSV technology. 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016).

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title = "Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSix for via-last TSV technology",

abstract = "With in the process temperature limit of less than 400 °C for via last technology, a simple method to improve the barrier ability of Ti layer in through Si via (TSV) has been studied. After annealing the TSV structures in vacuum at temperatures up to 400 °C, we did observe a tremendous improvement in leak current characteristics for SiO2 dielectric. It was found that the self-formed TiSix at the interface between Cu and SiO2 during the sputter deposition of Ti barrier layer was converted into an amorphous TiOx and SiOx upon vacuum annealing. This simple vacuum annealing of Cu-TSVs is a promising approach for using Ti as barrier layer in via-last 3D-integration.",

keywords = "Cu-TSV, Ti Barrier layer, XPS",

author = "Murugesan Mariappan and Jichel Bea and Takafumi Fukushima and Makoto Motoyoshi and Tetsu Tanaka and Mitsumasa Koyanagi",

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Mariappan, M, Bea, J, Fukushima, T, Motoyoshi, M, Tanaka, T & Koyanagi, M 2017, Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSi_x for via-last TSV technology. in 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016., 7970017, 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016, San Francisco, United States, 16/11/8. https://doi.org/10.1109/3DIC.2016.7970017

Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSi_x for via-last TSV technology. / Mariappan, Murugesan; Bea, Jichel; Fukushima, Takafumi et al.
2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7970017 (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - With in the process temperature limit of less than 400 °C for via last technology, a simple method to improve the barrier ability of Ti layer in through Si via (TSV) has been studied. After annealing the TSV structures in vacuum at temperatures up to 400 °C, we did observe a tremendous improvement in leak current characteristics for SiO2 dielectric. It was found that the self-formed TiSix at the interface between Cu and SiO2 during the sputter deposition of Ti barrier layer was converted into an amorphous TiOx and SiOx upon vacuum annealing. This simple vacuum annealing of Cu-TSVs is a promising approach for using Ti as barrier layer in via-last 3D-integration.

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Mariappan M, Bea J, Fukushima T, Motoyoshi M, Tanaka T, Koyanagi M. Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSi_x for via-last TSV technology. In 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. 7970017. (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016). doi: 10.1109/3DIC.2016.7970017