Improving threshold-voltage uniformity of 0.1 μm InP-based MODFETs with different gate layouts

D. Xu; T. Enoki; T. Suemitsu; Y. Umeda; Y. Yamane; Y. Ishii

doi:10.1049/el:19981118

Improving threshold-voltage uniformity of 0.1 μm InP-based MODFETs with different gate layouts

D. Xu, T. Enoki, T. Suemitsu, Y. Umeda, Y. Yamane, Y. Ishii

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

It is shown that the threshold-voltage uniformity of 0.1μm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.

Original language	English
Pages (from-to)	1614-1615
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	16
DOIs	https://doi.org/10.1049/el:19981118
Publication status	Published - 1998 Aug 6

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10.1049/el:19981118

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abstract = "It is shown that the threshold-voltage uniformity of 0.1μm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.",

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AU - Xu, D.

AU - Enoki, T.

AU - Suemitsu, T.

AU - Umeda, Y.

AU - Yamane, Y.

AU - Ishii, Y.

PY - 1998/8/6

Y1 - 1998/8/6

N2 - It is shown that the threshold-voltage uniformity of 0.1μm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.

AB - It is shown that the threshold-voltage uniformity of 0.1μm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.

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Improving threshold-voltage uniformity of 0.1 μm InP-based MODFETs with different gate layouts

Abstract

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