Abstract
Effects of impurities on the dynamic activities of dislocations in InP are discussed. It is shown that S impurity enhances the motion of α dislocations and retards the motion of β and screw dislocations. Zn impurity strongly retards the motion of all types of dislocations. Ga and As impurities have little effect on the mobilities of dislocations, but strongly suppress the generation of α dislocations.
| Original language | English |
|---|---|
| Title of host publication | Third Int Conf Indium Phosphide Relat Mater |
| Publisher | Publ by IEEE |
| Pages | 648-651 |
| Number of pages | 4 |
| ISBN (Print) | 0879426268 |
| Publication status | Published - 1991 Dec 1 |
| Event | Third International Conference on Indium Phosphide and Related Materials - Cardiff, Wales Duration: 1991 Apr 8 → 1991 Apr 11 |
Other
| Other | Third International Conference on Indium Phosphide and Related Materials |
|---|---|
| City | Cardiff, Wales |
| Period | 91/4/8 → 91/4/11 |
ASJC Scopus subject areas
- Engineering(all)