Impurity effects on the low-temperature properties of UAl2

T. Kuwai; H. Enami; Y. Miyako; C. C. Paulsen; J. Voiron; J. L. Tholence; T. Shikama

doi:10.1016/0921-4526(93)90699-7

Impurity effects on the low-temperature properties of UAl₂

T. Kuwai, H. Enami, Y. Miyako, C. C. Paulsen, J. Voiron, J. L. Tholence, T. Shikama

Institute for Materials Research (IMR)

Research output: Contribution to journal › Article › peer-review

Abstract

We have measured the magnetization of pure UAl₂ below 1 K down to 0.1 K and the effects of impurities on the susceptibility and specific heat in the temperature range 2-370 K for the susceptibility and 1.5-20 K for the specific heat. The magnetization of UAl₂ shows a slight upturn in the curvature below 1 K with respect to the applied magnetic field. This behavior is quite similar to that of CeRu₂Si₂ below the critical field of the metamagnetic-like jump. Silicon impurities suppress the enhancement of the electronic specific heat coefficient, in contrast with the case of praseodymium.

Original language	English
Pages (from-to)	769-771
Number of pages	3
Journal	Physica B: Physics of Condensed Matter
Volume	186-188
Issue number	C
DOIs	https://doi.org/10.1016/0921-4526(93)90699-7
Publication status	Published - 1993 May 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Impurity effects on the low-temperature properties of UAl2",

abstract = "We have measured the magnetization of pure UAl2 below 1 K down to 0.1 K and the effects of impurities on the susceptibility and specific heat in the temperature range 2-370 K for the susceptibility and 1.5-20 K for the specific heat. The magnetization of UAl2 shows a slight upturn in the curvature below 1 K with respect to the applied magnetic field. This behavior is quite similar to that of CeRu2Si2 below the critical field of the metamagnetic-like jump. Silicon impurities suppress the enhancement of the electronic specific heat coefficient, in contrast with the case of praseodymium.",

author = "T. Kuwai and H. Enami and Y. Miyako and Paulsen, {C. C.} and J. Voiron and Tholence, {J. L.} and T. Shikama",

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AU - Kuwai, T.

AU - Enami, H.

AU - Miyako, Y.

AU - Paulsen, C. C.

AU - Voiron, J.

AU - Tholence, J. L.

AU - Shikama, T.

PY - 1993/5/2

Y1 - 1993/5/2

N2 - We have measured the magnetization of pure UAl2 below 1 K down to 0.1 K and the effects of impurities on the susceptibility and specific heat in the temperature range 2-370 K for the susceptibility and 1.5-20 K for the specific heat. The magnetization of UAl2 shows a slight upturn in the curvature below 1 K with respect to the applied magnetic field. This behavior is quite similar to that of CeRu2Si2 below the critical field of the metamagnetic-like jump. Silicon impurities suppress the enhancement of the electronic specific heat coefficient, in contrast with the case of praseodymium.

AB - We have measured the magnetization of pure UAl2 below 1 K down to 0.1 K and the effects of impurities on the susceptibility and specific heat in the temperature range 2-370 K for the susceptibility and 1.5-20 K for the specific heat. The magnetization of UAl2 shows a slight upturn in the curvature below 1 K with respect to the applied magnetic field. This behavior is quite similar to that of CeRu2Si2 below the critical field of the metamagnetic-like jump. Silicon impurities suppress the enhancement of the electronic specific heat coefficient, in contrast with the case of praseodymium.

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Impurity effects on the low-temperature properties of UAl₂

Abstract

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