Impurity induced insulator-to-metal transitions in half-filled Mott insulators

Hisatoshi Yokoyama, Ryo Sato, Kenji Kobayashi

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In view of cuprate superconductors, effects of point-type impurity potential (V) on half-filled antiferromagnetic and paramagnetic states are studied for a strongly correlated square-lattice Hubbard model (U/t = 12) with a diagonal transfer (t′), using a variational Monte Carlo method. In the trial states, we introduce a Rice-Brinkman-type one-body projector for V, which enables us to treat the whole range of V (- ∞ < V/t < ∞) with small statistical errors. Filling-control-type Mott (insulator-to-metal) transitions are found to occur at U (∼ ±U). In the metallic states V U, charge carriers are holes (electrons) in the case of attractive (repulsive) potential. The mechanism of the transitions is intuitively understood.

Original languageEnglish
Article number012024
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 2019 Oct 15
Event31st International Symposium on Superconductivity, ISS 2018 - Tsukuba, Ibaraki, Japan
Duration: 2018 Dec 122018 Dec 14


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