TY - GEN
T1 - In-band spurious attenuation in LTE-class RFIC chip using a soft magnetic thin film
AU - Muroga, Sho
AU - Endo, Yasushi
AU - Ito, Tetsuo
AU - Tanaka, Satoshi
AU - Murakami, Motoki
AU - Hori, Kazuaki
AU - Takahashi, Satoru
AU - Naoya, Azuma
AU - Makita, Tetsuya
AU - Imai, Satoshi
AU - Nagata, Makoto
AU - Yamaguchi, Masahiro
PY - 2013/12/1
Y1 - 2013/12/1
N2 - A long term evolution (LTE)-class CMOS radio frequency integrated circuit (RFIC) receiver test element group (TEG) chip is developed in our project for the next generation cell phone handsets in order to clarify the on-chip-level noise coupling and demonstrate the noise attenuation using the soft magnetic thin film as an on-chip electromagnetic noise suppressor. The TEG chip equips a noise generator and a RF receiver block. The RF block amplifies and demodulates transmitted signals to IQ signals. A Co85Zr3Nb 12 soft magnetic thin film is integrated onto the TEG chip as a noise suppressor. In this report, the noise generator is driven by a clock signal of 124.803 MHz and generates 17th harmonics of 2,165 MHz conflicts with the LTE band 1 (2,110-2,170 MHz). As a result, the in-band digital noise was suppressed 5-20 dB by the Co-Zr-Nb thin film as an integrated noise suppressor.
AB - A long term evolution (LTE)-class CMOS radio frequency integrated circuit (RFIC) receiver test element group (TEG) chip is developed in our project for the next generation cell phone handsets in order to clarify the on-chip-level noise coupling and demonstrate the noise attenuation using the soft magnetic thin film as an on-chip electromagnetic noise suppressor. The TEG chip equips a noise generator and a RF receiver block. The RF block amplifies and demodulates transmitted signals to IQ signals. A Co85Zr3Nb 12 soft magnetic thin film is integrated onto the TEG chip as a noise suppressor. In this report, the noise generator is driven by a clock signal of 124.803 MHz and generates 17th harmonics of 2,165 MHz conflicts with the LTE band 1 (2,110-2,170 MHz). As a result, the in-band digital noise was suppressed 5-20 dB by the Co-Zr-Nb thin film as an integrated noise suppressor.
UR - http://www.scopus.com/inward/record.url?scp=84893181882&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893181882&partnerID=8YFLogxK
U2 - 10.1109/ISEMC.2013.6670493
DO - 10.1109/ISEMC.2013.6670493
M3 - Conference contribution
AN - SCOPUS:84893181882
SN - 9781479904082
T3 - IEEE International Symposium on Electromagnetic Compatibility
SP - 657
EP - 661
BT - Proceedings - 2013 IEEE International Symposium on Electromagnetic Compatibility, EMC 2013
T2 - 2013 IEEE International Symposium on Electromagnetic Compatibility, EMC 2013
Y2 - 5 August 2013 through 9 August 2013
ER -