In-line evalution method of the intrinsic stress of thin films used for transistor structures

Engineering

• Assembly 5%
• Assembly Process 5%
• Average Stress 5%
• Concentration Field 11%
• Electronic Devices 5%
• Electronics 22%
• Estimated Value 11%
• Experiments 5%
• Focused Ion Beam 5%
• Gate Electrode 16%
• Gate Length 5%
• Induced Stress 11%
• Interference 11%
• Intrinsic Stress 11%
• Measurer 5%
• Performance 11%
• Point Bending 5%
• Processing 5%
• Products 5%
• Reliability 5%
• Semiconductor Material 5%
• Stress Concentration 33%
• Thin Films 33%
• Transistor 66%

Physics

• Deposition 11%
• Detection 16%
• Dielectrics 5%
• Performance 11%
• Reliability 5%
• Residual Stress 100%
• Semiconductors (Materials) 5%
• Thin Films 33%
• Tungsten 5%

Material Science

• Dielectric Material 5%
• Finite Element Modeling 16%
• Liquid Films 5%
• Mechanical Stress 16%
• Semiconductor Material 5%
• Thin Films 33%