TY - JOUR
T1 - In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D0 19 Mn 2 FeGa thin film
AU - Ogasawara, Takahiro
AU - Jackson, Edward
AU - Tsunoda, Masakiyo
AU - Ando, Yasuo
AU - Hirohata, Atsufumi
N1 - Funding Information:
This study is partially supported by JSPS - EPSRC Core-to-Core programme ( EP/M02458X/1 ). Also, the authors would like to thank M. Oogane for fruitful discussion and J. Gompertz, W. Frost, H. Wu, and J. Sinclair for their experimental support.
Publisher Copyright:
© 2019 The Authors
PY - 2019/8/15
Y1 - 2019/8/15
N2 - Fe-doped D0 19 Mn 3 Ga films were studied in terms of both their in-plane and perpendicular exchange bias field, H ex , induced in the attached ferromagnetic layer. The (Mn,Fe) 3 Ga films were deposited on a Si substrate with a Ru buffer layer with a (0 0 0 1)-oriented single D0 19 phase at room temperature. Consequently, in-plane and perpendicular H ex were measured in bilayers with a CoFe layer and a [Co/Pt] multilayer, respectively. In-plane H ex was found to be dependent on the Fe compositions, showing the largest value of 446 Oe at 120 K for 10-nm-thick Mn 1.99 Fe 0.41 Ga. Perpendicular H ex was dependent on not only the Fe compositions but also the thickness of (Mn,Fe) 3 Ga, exhibiting the maximum of 163 Oe at 120 K for 5-nm-thick Mn 1.96 Fe 0.67 Ga. The median blocking temperature of both in-plane and perpendicular H ex systems for 10-nm-thick (Mn,Fe) 3 Ga were measured to be 235 and 240 K, respectively. The measured in-plane and perpendicular H ex induced by (Mn,Fe) 3 Ga are generated by a spin structural change from noncollinear to noncoplaner in ab-plane as expected from the previous theoretical study [A. Kundu and S. Ghosh, Intermetallics 93, 209 (2018)].
AB - Fe-doped D0 19 Mn 3 Ga films were studied in terms of both their in-plane and perpendicular exchange bias field, H ex , induced in the attached ferromagnetic layer. The (Mn,Fe) 3 Ga films were deposited on a Si substrate with a Ru buffer layer with a (0 0 0 1)-oriented single D0 19 phase at room temperature. Consequently, in-plane and perpendicular H ex were measured in bilayers with a CoFe layer and a [Co/Pt] multilayer, respectively. In-plane H ex was found to be dependent on the Fe compositions, showing the largest value of 446 Oe at 120 K for 10-nm-thick Mn 1.99 Fe 0.41 Ga. Perpendicular H ex was dependent on not only the Fe compositions but also the thickness of (Mn,Fe) 3 Ga, exhibiting the maximum of 163 Oe at 120 K for 5-nm-thick Mn 1.96 Fe 0.67 Ga. The median blocking temperature of both in-plane and perpendicular H ex systems for 10-nm-thick (Mn,Fe) 3 Ga were measured to be 235 and 240 K, respectively. The measured in-plane and perpendicular H ex induced by (Mn,Fe) 3 Ga are generated by a spin structural change from noncollinear to noncoplaner in ab-plane as expected from the previous theoretical study [A. Kundu and S. Ghosh, Intermetallics 93, 209 (2018)].
UR - http://www.scopus.com/inward/record.url?scp=85064248098&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85064248098&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2019.04.024
DO - 10.1016/j.jmmm.2019.04.024
M3 - Article
AN - SCOPUS:85064248098
SN - 0304-8853
VL - 484
SP - 307
EP - 312
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
ER -