In-plane current-induced magnetization switching in CoGa/MnGa/MgO films

Masahiro Takikawa; Kazuya Z. Suzuki; Reza Ranjbar; Shigemi Mizukami

doi:10.7567/APEX.10.073004

In-plane current-induced magnetization switching in CoGa/MnGa/MgO films

Masahiro Takikawa, Kazuya Z. Suzuki, Reza Ranjbar, Shigemi Mizukami

Advanced Institute for Materials Research (AIMR)

Tohoku University

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In-plane current-induced magnetization switching was investigated in a micron-sized Hall bar for the paramagnetic CoGa-buffered and MgO-capped 2-nm-thick ferrimagnetic L1₀ MnGa layer with perpendicular magnetic anisotropy. Current-induced switching was clearly observed when the in-plane longitudinal magnetic field applied was sufficiently large and at an injection current density of 10¹¹ A/m². The in-plane field direction and CoGa thickness dependence indicate that the deterministic bipolar switching primarily originates from a damping-like spin-orbit torque (SOT) arising from the spin-Hall effect in CoGa with a positive spin-Hall angle. The current pulse response suggested that the SOT switching was thermally assisted by Joule heating.

Original language	English
Article number	073004
Journal	Applied Physics Express
Volume	10
Issue number	7
DOIs	https://doi.org/10.7567/APEX.10.073004
Publication status	Published - 2017 Jul

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title = "In-plane current-induced magnetization switching in CoGa/MnGa/MgO films",

abstract = "In-plane current-induced magnetization switching was investigated in a micron-sized Hall bar for the paramagnetic CoGa-buffered and MgO-capped 2-nm-thick ferrimagnetic L10 MnGa layer with perpendicular magnetic anisotropy. Current-induced switching was clearly observed when the in-plane longitudinal magnetic field applied was sufficiently large and at an injection current density of 1011 A/m2. The in-plane field direction and CoGa thickness dependence indicate that the deterministic bipolar switching primarily originates from a damping-like spin-orbit torque (SOT) arising from the spin-Hall effect in CoGa with a positive spin-Hall angle. The current pulse response suggested that the SOT switching was thermally assisted by Joule heating.",

author = "Masahiro Takikawa and Suzuki, {Kazuya Z.} and Reza Ranjbar and Shigemi Mizukami",

note = "Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

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AU - Takikawa, Masahiro

AU - Suzuki, Kazuya Z.

AU - Ranjbar, Reza

AU - Mizukami, Shigemi

PY - 2017/7

Y1 - 2017/7

N2 - In-plane current-induced magnetization switching was investigated in a micron-sized Hall bar for the paramagnetic CoGa-buffered and MgO-capped 2-nm-thick ferrimagnetic L10 MnGa layer with perpendicular magnetic anisotropy. Current-induced switching was clearly observed when the in-plane longitudinal magnetic field applied was sufficiently large and at an injection current density of 1011 A/m2. The in-plane field direction and CoGa thickness dependence indicate that the deterministic bipolar switching primarily originates from a damping-like spin-orbit torque (SOT) arising from the spin-Hall effect in CoGa with a positive spin-Hall angle. The current pulse response suggested that the SOT switching was thermally assisted by Joule heating.

AB - In-plane current-induced magnetization switching was investigated in a micron-sized Hall bar for the paramagnetic CoGa-buffered and MgO-capped 2-nm-thick ferrimagnetic L10 MnGa layer with perpendicular magnetic anisotropy. Current-induced switching was clearly observed when the in-plane longitudinal magnetic field applied was sufficiently large and at an injection current density of 1011 A/m2. The in-plane field direction and CoGa thickness dependence indicate that the deterministic bipolar switching primarily originates from a damping-like spin-orbit torque (SOT) arising from the spin-Hall effect in CoGa with a positive spin-Hall angle. The current pulse response suggested that the SOT switching was thermally assisted by Joule heating.

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In-plane current-induced magnetization switching in CoGa/MnGa/MgO films

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