In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

Yutaka Ohno, Toshinori Taishi, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Extended defects acting as non-radiative recombination center or those acting as radiative one were, respectively, studied by transmission electron microscopy under the illumination of a monochromatic light or cathodoluminescence spectroscopy combined with light illumination. By means of this method, defect levels associated with dislocations in ZnO, which were introduced at elevated temperatures above 923 K, were determined. It was proposed that (i) a screw dislocation, presumably acting as non-radiative recombination center, glides under the illumination of a light with photon energy above 2.48-2.61 eV, due to an electron-hole recombination at a defect level of 2.48-2.61 eV depth, and (ii) a mixed dislocation acts as radiative recombination center with a defect level of 3.1 eV depth.

Original languageEnglish
Pages (from-to)1904-1911
Number of pages8
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number8
Publication statusPublished - 2009 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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