We have performed an in situ angle-resolved photoemission study of atomically flat surfaces of La1 - xSrxMnO3 (LSMO) single-crystal thin films grown on SrTiO3 (0 0 1) substrates by laser molecular beam epitaxy, and investigated the changes in the band structure induced by hole-doping. The band structures of LSMO x = 0.4 thin films consist of several highly dispersive O 2p-derived bands at the binding energies of 2.5-7 eV, almost dispersionless Mn 3d t2g bands at ∼2 eV, and a dispersive Mn 3d eg-derived majority band at ∼0.5 eV. We find that the energy positions of these bands monotonically shift toward higher binding energy with decreasing hole concentration in a rigid-band manner, whereas the lower binding energy part of the eg-derived emission within 1.5 eV of the Fermi level (EF) gradually disappears. These results suggest that the simple rigid-band model does not describe the electronic structure near EF of LSMO.
|Number of pages||4|
|Journal||Journal of Electron Spectroscopy and Related Phenomena|
|Publication status||Published - 2005 Jun|
- Angle-resolved photoelectron spectroscopy
- Band structure
- LaSrMnO thin film
- Laser molecular beam epitaxy