In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

Tae Youb Kim, Chul Huh, Nae Man Park, Cheol Jong Choi, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasmaenhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

Original languageEnglish
Article number634
JournalNanoscale Research Letters
Publication statusPublished - 2012


  • Hexagonal silicon phase structure
  • In situ-formed Si-NCs
  • Silicon carbide-based films
  • Silicon nanocrystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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