In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy

Masakazu Sugiyama; Yunpeng Wang; Momoko Deura; Ryusuke Onitsuka; Yoshiaki Nakano

doi:10.1109/PVSC.2009.5411553

In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy

Masakazu Sugiyama, Yunpeng Wang, Momoko Deura, Ryusuke Onitsuka, Yoshiaki Nakano

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In situ monitoring of surface reflectivity and reflectance anisotropy (RA) was examined as a monitor of strain during the metal-organic vapor phase epitaxy (MOVPE) of strain-balanced InGaAs/GaAsP quantum-well stacks, aiming at a middle cell that improves current matching in tandem solar cells. The RA, which is in principle sensitive only to the topmost surface of the crystal, changed linearly with time during the growth of InGaAs and GaAsP with opposite slopes according to the layers. This behavior seems to reflect the accumulation of strain with the growth of InGaAs layer and its release during the growth of GaAsP layer, allowing us to manage strain balance in the stacking of quantum wells based on in situ observation. Such strain balance enabled 100 stacks of InGaAs/GaAsP quantum wells without threading dislocations. The GaAs pin junction with the strain-balanced quantum wells in the i layer exhibited the absorption edge at 1.2 eV.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	1879-1882
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411553
Publication status	Published - 2009 Dec 1
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA Duration: 2009 Jun 7 → 2009 Jun 12

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
City	Philadelphia, PA
Period	09/6/7 → 09/6/12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

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10.1109/PVSC.2009.5411553

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Sugiyama, M, Wang, Y, Deura, M, Onitsuka, R & Nakano, Y 2009, In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411553, pp. 1879-1882, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, 09/6/7. https://doi.org/10.1109/PVSC.2009.5411553

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title = "In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy",

abstract = "In situ monitoring of surface reflectivity and reflectance anisotropy (RA) was examined as a monitor of strain during the metal-organic vapor phase epitaxy (MOVPE) of strain-balanced InGaAs/GaAsP quantum-well stacks, aiming at a middle cell that improves current matching in tandem solar cells. The RA, which is in principle sensitive only to the topmost surface of the crystal, changed linearly with time during the growth of InGaAs and GaAsP with opposite slopes according to the layers. This behavior seems to reflect the accumulation of strain with the growth of InGaAs layer and its release during the growth of GaAsP layer, allowing us to manage strain balance in the stacking of quantum wells based on in situ observation. Such strain balance enabled 100 stacks of InGaAs/GaAsP quantum wells without threading dislocations. The GaAs pin junction with the strain-balanced quantum wells in the i layer exhibited the absorption edge at 1.2 eV.",

author = "Masakazu Sugiyama and Yunpeng Wang and Momoko Deura and Ryusuke Onitsuka and Yoshiaki Nakano",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/PVSC.2009.5411553",

language = "English",

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pages = "1879--1882",

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T1 - In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy

AU - Sugiyama, Masakazu

AU - Wang, Yunpeng

AU - Deura, Momoko

AU - Onitsuka, Ryusuke

AU - Nakano, Yoshiaki

PY - 2009/12/1

Y1 - 2009/12/1

N2 - In situ monitoring of surface reflectivity and reflectance anisotropy (RA) was examined as a monitor of strain during the metal-organic vapor phase epitaxy (MOVPE) of strain-balanced InGaAs/GaAsP quantum-well stacks, aiming at a middle cell that improves current matching in tandem solar cells. The RA, which is in principle sensitive only to the topmost surface of the crystal, changed linearly with time during the growth of InGaAs and GaAsP with opposite slopes according to the layers. This behavior seems to reflect the accumulation of strain with the growth of InGaAs layer and its release during the growth of GaAsP layer, allowing us to manage strain balance in the stacking of quantum wells based on in situ observation. Such strain balance enabled 100 stacks of InGaAs/GaAsP quantum wells without threading dislocations. The GaAs pin junction with the strain-balanced quantum wells in the i layer exhibited the absorption edge at 1.2 eV.

AB - In situ monitoring of surface reflectivity and reflectance anisotropy (RA) was examined as a monitor of strain during the metal-organic vapor phase epitaxy (MOVPE) of strain-balanced InGaAs/GaAsP quantum-well stacks, aiming at a middle cell that improves current matching in tandem solar cells. The RA, which is in principle sensitive only to the topmost surface of the crystal, changed linearly with time during the growth of InGaAs and GaAsP with opposite slopes according to the layers. This behavior seems to reflect the accumulation of strain with the growth of InGaAs layer and its release during the growth of GaAsP layer, allowing us to manage strain balance in the stacking of quantum wells based on in situ observation. Such strain balance enabled 100 stacks of InGaAs/GaAsP quantum wells without threading dislocations. The GaAs pin junction with the strain-balanced quantum wells in the i layer exhibited the absorption edge at 1.2 eV.

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M3 - Conference contribution

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EP - 1882

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy

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