TY - JOUR
T1 - In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al
AU - Tsukimoto, Susumu
AU - Arai, S.
AU - Konno, M.
AU - Kamino, T.
AU - Sasaki, K.
AU - Saka, H.
PY - 2001/8/6
Y1 - 2001/8/6
N2 - Electron energy loss spectroscopy was used to observe the segregation of Al on a Si surface above the melting point of Al. A mixture of Al and Si particles was heated above the melting point of Al in a vacuum of 1 × 10-5 Pa. The Si surface, which initially had been covered with an amorphous oxide layer before heating, became clean and atomically facetted when the Al melted. It was shown that the Si surface was segregated with Al.
AB - Electron energy loss spectroscopy was used to observe the segregation of Al on a Si surface above the melting point of Al. A mixture of Al and Si particles was heated above the melting point of Al in a vacuum of 1 × 10-5 Pa. The Si surface, which initially had been covered with an amorphous oxide layer before heating, became clean and atomically facetted when the Al melted. It was shown that the Si surface was segregated with Al.
KW - EELS
KW - In-situ heating experiment
KW - Si surface
KW - Wetting by liquid metals
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U2 - 10.1046/j.1365-2818.2001.00905.x
DO - 10.1046/j.1365-2818.2001.00905.x
M3 - Article
C2 - 11454150
AN - SCOPUS:0034923869
SN - 0022-2720
VL - 203
SP - 17
EP - 21
JO - Journal of Microscopy
JF - Journal of Microscopy
IS - 1
ER -