TY - JOUR
T1 - In situ IR spectral study of the reaction of a-Si:H:F films with dimethylaluminum hydride
AU - Wadayama, Toshimasa
AU - Maiwa, Yoshihisa
AU - Hatta, Aritada
N1 - Funding Information:
One of the authors (T.W.) expresses his cordial thanks to Izumi Science and Technology Foundation for a financial support of this work. This work was partly supported by a Grant-in-Aid (No. 06750712) from the Ministry of Education, Science, and Culture of Japan.
PY - 1996/12
Y1 - 1996/12
N2 - The reaction of dimethylaluminum hydride (DMAH) with a-Si:H:F films prepared by spontaneous chemical vapor deposition (SCVD) has been studied in situ using polarization modulation IR spectroscopy. It is found that SCVD films before DMAH exposure contain SiF2, SiH2F, and SiH2 species. Upon exposure to DMAH at a temperature ranging from 373 to 593 K, the IR bands due to SiF2 and SiH2F stretch vibrations decrease in intensity, whereas the intensity of the SiH2 stretch band increases. These changes are remarkable at high temperature; in particular the SiH2 stretch band shifts to lower wavenumber with increasing exposure temperature. These results suggest that DMAH reacts with the SiF2 and SiH2F species to form SiH2 and SiH2. We also reveal a temperature dependent correlation between the spectral changes and the deposited amounts of Al, as determined by induced coupled plasma analysis.
AB - The reaction of dimethylaluminum hydride (DMAH) with a-Si:H:F films prepared by spontaneous chemical vapor deposition (SCVD) has been studied in situ using polarization modulation IR spectroscopy. It is found that SCVD films before DMAH exposure contain SiF2, SiH2F, and SiH2 species. Upon exposure to DMAH at a temperature ranging from 373 to 593 K, the IR bands due to SiF2 and SiH2F stretch vibrations decrease in intensity, whereas the intensity of the SiH2 stretch band increases. These changes are remarkable at high temperature; in particular the SiH2 stretch band shifts to lower wavenumber with increasing exposure temperature. These results suggest that DMAH reacts with the SiF2 and SiH2F species to form SiH2 and SiH2. We also reveal a temperature dependent correlation between the spectral changes and the deposited amounts of Al, as determined by induced coupled plasma analysis.
KW - Aluminum
KW - Amorphous silicon
KW - Dimethylaluminum hydride
KW - MOCVD
KW - Polarization modulation
KW - Reflection absorption
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U2 - 10.1016/0924-2031(96)00041-0
DO - 10.1016/0924-2031(96)00041-0
M3 - Article
AN - SCOPUS:0042540091
SN - 0924-2031
VL - 13
SP - 107
EP - 112
JO - Vibrational Spectroscopy
JF - Vibrational Spectroscopy
IS - 1
ER -