In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon

Toshimasa Wadayama; Yoshihisa Maiwa; Hironobu Shibata; Aritada Hatta

doi:10.1143/JJAP.34.L779

In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon

Toshimasa Wadayama, Yoshihisa Maiwa, Hironobu Shibata, Aritada Hatta

ENV - Frontier Science for Advanced Environment

Tohoku University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in situ with polarization modulation IR spectroscopy. Below 473 K, the absorption bands due to SiHs species incorporated in the a-Si:H completely disappear upon exposure to DMAH under UV illumination while those due to SiH₂ species remain nearly unchanged. The intensity reduction of the SiH₂ absorption bands is observed above 473 K. These spectral changes are observed only in early stages of DMAH exposure. These results suggest that DMAH reacts with SiH₂ species present on the topmost surface of the a-Si:H film.

Original language	English
Pages (from-to)	L779-L781
Journal	Japanese Journal of Applied Physics
Volume	34
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.34.L779
Publication status	Published - 1995 Jun 1

Keywords

Aluminum
Amorphous silicon
Dimethylaluminum hydride
MO-CVD
PM-IR

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10.1143/JJAP.34.L779

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title = "In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon",

abstract = "The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in situ with polarization modulation IR spectroscopy. Below 473 K, the absorption bands due to SiHs species incorporated in the a-Si:H completely disappear upon exposure to DMAH under UV illumination while those due to SiH2 species remain nearly unchanged. The intensity reduction of the SiH2 absorption bands is observed above 473 K. These spectral changes are observed only in early stages of DMAH exposure. These results suggest that DMAH reacts with SiH2 species present on the topmost surface of the a-Si:H film.",

keywords = "Aluminum, Amorphous silicon, Dimethylaluminum hydride, MO-CVD, PM-IR",

author = "Toshimasa Wadayama and Yoshihisa Maiwa and Hironobu Shibata and Aritada Hatta",

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T1 - In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon

AU - Wadayama, Toshimasa

AU - Maiwa, Yoshihisa

AU - Shibata, Hironobu

AU - Hatta, Aritada

PY - 1995/6/1

Y1 - 1995/6/1

N2 - The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in situ with polarization modulation IR spectroscopy. Below 473 K, the absorption bands due to SiHs species incorporated in the a-Si:H completely disappear upon exposure to DMAH under UV illumination while those due to SiH2 species remain nearly unchanged. The intensity reduction of the SiH2 absorption bands is observed above 473 K. These spectral changes are observed only in early stages of DMAH exposure. These results suggest that DMAH reacts with SiH2 species present on the topmost surface of the a-Si:H film.

AB - The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in situ with polarization modulation IR spectroscopy. Below 473 K, the absorption bands due to SiHs species incorporated in the a-Si:H completely disappear upon exposure to DMAH under UV illumination while those due to SiH2 species remain nearly unchanged. The intensity reduction of the SiH2 absorption bands is observed above 473 K. These spectral changes are observed only in early stages of DMAH exposure. These results suggest that DMAH reacts with SiH2 species present on the topmost surface of the a-Si:H film.

KW - Aluminum

KW - Amorphous silicon

KW - Dimethylaluminum hydride

KW - MO-CVD

KW - PM-IR

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DO - 10.1143/JJAP.34.L779

M3 - Article

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6

ER -

In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon

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