In situ observation of anodic dissolution process of p-GaAs(001) in HCl solution by surface X-ray diffraction

Kohei Uosaki, Michio Koinuma, Toshihiro Kondo, Shen Ye, Ichizo Yagi, Hidenori Noguchi, Kazuhisa Tamura, Kunikazu Takeshita, Tadashi Matsushita

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The grazing incidence X-ray diffraction technique has been applied to monitor the anodic dissolution process of GaAs(001) in 0.1 M HCl solution. The surface diffraction intensity for the 〈11〉 direction of GaAs(001) was clearly observed and it decreased with time when the positive potential was applied to the electrode.

Original languageEnglish
Pages (from-to)13-17
Number of pages5
JournalJournal of Electroanalytical Chemistry
Volume429
Issue number1-2
DOIs
Publication statusPublished - 1997 May 30

Keywords

  • Anodic dissolution
  • p-GaAs(001)
  • Surface X-ray diffraction

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