TY - JOUR
T1 - In situ observation of formation processes of titanium compound thin films due to ion implantation in a transmission electron microscope
AU - Kasukabe, Y.
AU - Dizard, Z. L.
AU - Fujino, Y.
AU - Tani, H.
AU - Osaka, M.
AU - Yamada, Y.
AU - Abe, H.
N1 - Funding Information:
This work was partially supported by a Grant-in Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.
PY - 2003/5
Y1 - 2003/5
N2 - Ions (C+, N2+ and O+) implantation into evaporated Ti films was performed in the transmission electron microscope (TEM). Ti films grown on NaCl (001) surfaces at room temperature consisted mainly of (03·5)-oriented hcp-Ti and (110)-oriented CaF2-type TiHx. NaCl-type Ti compounds of (001)-oriented TiCz, TiNy and TiOu were epitaxially formed by the transformation of (03·5)-oriented hcp-Ti to (001)-oriented fcc-Ti sublattices and the occupation of the octahedral (O-) sites by implanted ions, whereas (110)-oriented Ti compounds were formed from a (110)-oriented TiHx without structural transformation of Ti sublattices. Observations of EELS elucidated that, in the early N-implanting stage, the variation of the energy of the loss peak due to plasmon excitation of the areas where TiHx grew in the as-evaporated Ti films was different from that of the areas where hcp-Ti grew. Analysis of Mulliken bond overlap populations indicated that the occupation of O-sites by N atoms gives rise to weakening of Ti-Ti bonds and forming of Ti-N covalent bonds.
AB - Ions (C+, N2+ and O+) implantation into evaporated Ti films was performed in the transmission electron microscope (TEM). Ti films grown on NaCl (001) surfaces at room temperature consisted mainly of (03·5)-oriented hcp-Ti and (110)-oriented CaF2-type TiHx. NaCl-type Ti compounds of (001)-oriented TiCz, TiNy and TiOu were epitaxially formed by the transformation of (03·5)-oriented hcp-Ti to (001)-oriented fcc-Ti sublattices and the occupation of the octahedral (O-) sites by implanted ions, whereas (110)-oriented Ti compounds were formed from a (110)-oriented TiHx without structural transformation of Ti sublattices. Observations of EELS elucidated that, in the early N-implanting stage, the variation of the energy of the loss peak due to plasmon excitation of the areas where TiHx grew in the as-evaporated Ti films was different from that of the areas where hcp-Ti grew. Analysis of Mulliken bond overlap populations indicated that the occupation of O-sites by N atoms gives rise to weakening of Ti-Ti bonds and forming of Ti-N covalent bonds.
KW - EELS
KW - Fcc-hcp transformation
KW - In situ TEM
KW - Ion-implantation
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U2 - 10.1016/S0168-583X(03)00769-9
DO - 10.1016/S0168-583X(03)00769-9
M3 - Conference article
AN - SCOPUS:0038075250
SN - 0168-583X
VL - 206
SP - 390
EP - 394
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
T2 - 13th International conference on Ion beam modification of Mate
Y2 - 1 September 2002 through 6 September 2002
ER -