In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon

Kuan Kan Hu; Kensaku Maeda; Haruhiko Morito; Keiji Shiga; Kozo Fujiwara

doi:10.1016/j.actamat.2018.04.062

In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon

Kuan Kan Hu, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

Tohoku University

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The evolution of the facet-facet groove at grain boundaries in multi-crystalline Si during solidification was investigated by in situ observation of the melt/crystal interface. The grain boundaries changed their propagation direction without any new grain formation or grain boundaries interaction during crystal growth. We monitored the melt/crystal interface over time and carefully estimated the growth velocities on two facets. We found that the facet velocities are different in some of our experimental observations and the development of random grain boundary is strongly dependent on the facet velocities. On the basis of our experimental observations, we discussed the direction of random grain boundary during solidification by considering the growth velocities on two facets.

Original language	English
Pages (from-to)	186-192
Number of pages	7
Journal	Acta Materialia
Volume	153
DOIs	https://doi.org/10.1016/j.actamat.2018.04.062
Publication status	Published - 2018 Jul

Keywords

Crystal-melt interface
Crystallization
Grain boundary grooves
Semiconducting silicon

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10.1016/j.actamat.2018.04.062

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title = "In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon",

abstract = "The evolution of the facet-facet groove at grain boundaries in multi-crystalline Si during solidification was investigated by in situ observation of the melt/crystal interface. The grain boundaries changed their propagation direction without any new grain formation or grain boundaries interaction during crystal growth. We monitored the melt/crystal interface over time and carefully estimated the growth velocities on two facets. We found that the facet velocities are different in some of our experimental observations and the development of random grain boundary is strongly dependent on the facet velocities. On the basis of our experimental observations, we discussed the direction of random grain boundary during solidification by considering the growth velocities on two facets.",

keywords = "Crystal-melt interface, Crystallization, Grain boundary grooves, Semiconducting silicon",

author = "Hu, {Kuan Kan} and Kensaku Maeda and Haruhiko Morito and Keiji Shiga and Kozo Fujiwara",

note = "Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research ( Fostering Joint International Research )” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS) . Publisher Copyright: {\textcopyright} 2018 Acta Materialia Inc.",

year = "2018",

month = jul,

doi = "10.1016/j.actamat.2018.04.062",

language = "English",

volume = "153",

pages = "186--192",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Ltd.",

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T1 - In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon

AU - Hu, Kuan Kan

AU - Maeda, Kensaku

AU - Morito, Haruhiko

AU - Shiga, Keiji

AU - Fujiwara, Kozo

N1 - Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research ( Fostering Joint International Research )” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS) . Publisher Copyright: © 2018 Acta Materialia Inc.

PY - 2018/7

Y1 - 2018/7

N2 - The evolution of the facet-facet groove at grain boundaries in multi-crystalline Si during solidification was investigated by in situ observation of the melt/crystal interface. The grain boundaries changed their propagation direction without any new grain formation or grain boundaries interaction during crystal growth. We monitored the melt/crystal interface over time and carefully estimated the growth velocities on two facets. We found that the facet velocities are different in some of our experimental observations and the development of random grain boundary is strongly dependent on the facet velocities. On the basis of our experimental observations, we discussed the direction of random grain boundary during solidification by considering the growth velocities on two facets.

AB - The evolution of the facet-facet groove at grain boundaries in multi-crystalline Si during solidification was investigated by in situ observation of the melt/crystal interface. The grain boundaries changed their propagation direction without any new grain formation or grain boundaries interaction during crystal growth. We monitored the melt/crystal interface over time and carefully estimated the growth velocities on two facets. We found that the facet velocities are different in some of our experimental observations and the development of random grain boundary is strongly dependent on the facet velocities. On the basis of our experimental observations, we discussed the direction of random grain boundary during solidification by considering the growth velocities on two facets.

KW - Crystal-melt interface

KW - Crystallization

KW - Grain boundary grooves

KW - Semiconducting silicon

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DO - 10.1016/j.actamat.2018.04.062

M3 - Article

AN - SCOPUS:85048817526

SN - 1359-6454

VL - 153

SP - 186

EP - 192

JO - Acta Materialia

JF - Acta Materialia

ER -

In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon

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Keywords

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