TY - JOUR
T1 - In situ observation of thermal and photon-induced reactions on Si surfaces by ultraviolet photoelectron spectroscopy
AU - Takakuwa, Y.
AU - Yamaguchi, T.
AU - Hori, T.
AU - Horie, T.
AU - Enta, Y.
AU - Sakamoto, H.
AU - Kato, H.
AU - Miyamoto, N.
N1 - Funding Information:
This study was supported partly by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, and Culture of Japan. This study has been performed under the approval of the Photon Factory Program Advisory Committee (proposal nos. 87-180, 89-207, 91-279, 92G293 and 94G366).
PY - 1998/3
Y1 - 1998/3
N2 - Ultraviolet photoelectron spectroscopy (UPS) was employed to observe in situ the surface reaction during the gas source molecular beam epitaxy (GSMBE), etching, and growth and decomposition of an SiO2 layer on high-temperature Si surfaces under a reactive gas atmosphere. In this paper, we review the in-situ UPS observation of the surface reactions during the thermal desorption of H2, SiCl and SiO on Si(001)2 × 1. A monochromatized synchrotron radiation (SR) source, the photon energy and radiation incidence angle of which were tuned for maximizing the photon-induced hydrogen removal efficiency, was used as a probe for UPS to observe in situ the surface reactions during SR-assisted GSMBE. As a result, no probe-beam-induced disturbance of the irradiation effect occurred and probe-beam positioning within the irradiated area was not necessary. The oscillatory behavior of the surface state intensities during GSMBE enabled us to measure simultaneously the growth rate and the surface hydrogen coverage during irradiation by an SR source.
AB - Ultraviolet photoelectron spectroscopy (UPS) was employed to observe in situ the surface reaction during the gas source molecular beam epitaxy (GSMBE), etching, and growth and decomposition of an SiO2 layer on high-temperature Si surfaces under a reactive gas atmosphere. In this paper, we review the in-situ UPS observation of the surface reactions during the thermal desorption of H2, SiCl and SiO on Si(001)2 × 1. A monochromatized synchrotron radiation (SR) source, the photon energy and radiation incidence angle of which were tuned for maximizing the photon-induced hydrogen removal efficiency, was used as a probe for UPS to observe in situ the surface reactions during SR-assisted GSMBE. As a result, no probe-beam-induced disturbance of the irradiation effect occurred and probe-beam positioning within the irradiated area was not necessary. The oscillatory behavior of the surface state intensities during GSMBE enabled us to measure simultaneously the growth rate and the surface hydrogen coverage during irradiation by an SR source.
KW - Etching
KW - Gas source molecular beam epitaxy
KW - Oxidation
KW - Photon-induced reactions
KW - Silicon
KW - Ultraviolet photoelectron spectrocopy
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U2 - 10.1016/s0368-2048(97)00261-2
DO - 10.1016/s0368-2048(97)00261-2
M3 - Article
AN - SCOPUS:17544403389
SN - 0368-2048
VL - 88-91
SP - 747
EP - 755
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
ER -