In situ observations of crystal growth of spherical Si single crystals

Xinming Huang, Satoshi Uda, Hideyoshi Tanabe, Nobuyuki Kitahara, Hisao Arimune, Keigo Hoshikawa

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Spherical Si single crystals for solar cell substrates have been grown successfully with a yield of almost 100%. Spherical Si multicrystals with diameters of approximately 400 μm in a teardrop shape were initially fabricated by a dropping method. The as-dropped spherical Si multicrystals were melted into droplets on a silica plate in an oxygen atmosphere, and the Si droplets were then recrystallized to form single crystals by supercooling within a specific temperature range. It was found that the recrystallization process occurred unidirectionally in each Si droplet, and recrystallized spherical Si single crystals free of defects (dislocations and oxidation-induced stacking faults, OSF) were obtained at a supercooling in the range of 12-42 °C. For supercooling ranging from 42 to 87 °C, spherical Si single crystals could still be obtained; however, many defects such as dislocations and OSF were generated. When the supercooling was larger than 87 °C, the crystal growth showed a dendritic growth mode and only multicrystals were obtained.

Original languageEnglish
Pages (from-to)341-347
Number of pages7
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2007 Sept 15


  • A1. Supercooling
  • A2. Single crystal growth
  • B1. Spherical Si crystal
  • B3. Solar cells


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