In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces

H. D. Jung; N. Kumagai; T. Hanada; Z. Zhu; T. Yao; T. Yasuda; K. Kimura

doi:10.1063/1.366209

In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces

H. D. Jung, N. Kumagai, T. Hanada, Z. Zhu, T. Yao, T. Yasuda, K. Kimura

Materials Design Division

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Nitridation processes on GaAs(001) surfaces exposed to N₂ microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism and its implication to GaN growth on GaAs surfaces are discussed.

Original language	English
Pages (from-to)	4684-4686
Number of pages	3
Journal	Journal of Applied Physics
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.366209
Publication status	Published - 1997 Nov 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.366209

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abstract = "Nitridation processes on GaAs(001) surfaces exposed to N2 microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism and its implication to GaN growth on GaAs surfaces are discussed.",

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T1 - In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces

AU - Jung, H. D.

AU - Kumagai, N.

AU - Hanada, T.

AU - Zhu, Z.

AU - Yao, T.

AU - Yasuda, T.

AU - Kimura, K.

PY - 1997/11/1

Y1 - 1997/11/1

N2 - Nitridation processes on GaAs(001) surfaces exposed to N2 microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism and its implication to GaN growth on GaAs surfaces are discussed.

AB - Nitridation processes on GaAs(001) surfaces exposed to N2 microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism and its implication to GaN growth on GaAs surfaces are discussed.

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JF - Journal of Applied Physics

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In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces

Abstract

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