@article{0146fc33f567407fb729ae7a83c6523d,
title = "In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si",
abstract = "Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni3C/NiCx)/graphene/Ni/Ni silicides (Ni2Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene.",
keywords = "3C-SiC, AR-XPS, Graphene, Ni carbide, Ni silicide",
author = "Mika Hasegawa and Kenta Sugawara and Ryota Suto and Shota Sambonsuge and Yuden Teraoka and Akitaka Yoshigoe and Sergey Filimonov and Hirokazu Fukidome and Maki Suemitsu",
note = "Funding Information: The synchrotron radiation experiments were performed at BL23SU of SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) and Japan Atomic Energy Agency (JAEA), supported by Mext Nanotechnology Network Program and Mext Nanotechnology Platform Japan Program (Proposal No. 2012A3807, 2012B3807, and 2013B3875). Part of this work was supported by Kakenhi (23000008, 25286053, 25600091). The authors thank Karsten Horn for a careful reading of the manuscript. Publisher Copyright: {\textcopyright} 2015, Hasegawa et al.",
year = "2015",
month = dec,
day = "1",
doi = "10.1186/s11671-015-1131-9",
language = "English",
volume = "10",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",
}