The interfacial reactions in the Zr/Si system were studied by in-situ cross-section TEM including high resolution mode. The reactions consisted of formation of an amorphous interlayer followed by the nucleation and growth of crystalline ZrSi2. The development of the amorphous layer was found to involve two different stages. The ZrSi2 was also found to grow layer-by-layer into the Si via a ledge mechanism.
|Number of pages||5|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 1994|
|Event||Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA|
Duration: 1994 Apr 4 → 1994 Apr 8