In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation

J. J. Wang; Y. Kasukabe; T. Yamamura; S. Yamamoto; Y. Fujino

doi:10.1016/j.tsf.2004.06.053

In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation

J. J. Wang, Y. Kasukabe, T. Yamamura, S. Yamamoto, Y. Fujino

Division of Research in Higher Education

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

To clarify the "epitaxial" formation process of TiN films due to nitrogen-implantation, changes of crystallographic structures of as-deposited Ti films during N-implantation were studied by using a transmission electron microscope (TEM). Analysis of the results of TEM observations indicated that H atoms which constituted TiH_x were completely released from as-deposited Ti films when the films were heated up to 350 °C, and that the H-released unstable fcc-Ti sublattice was transformed into hcp-structure. Ions of N₂⁺ with 62 keV were implanted into the hcp-Ti films held at 350 °C. In the N-implanted Ti film (N/Ti=0.954), there coexisted NaCl-type TiN_y and a small amount of hcp-Ti. The (001)- and (110)-oriented TiN_y were "epitaxially" formed by the transformation of (03·5)- and (2̄1·0)-oriented hcp-Ti, respectively. The lattice of N-implanted hcp-Ti was expanded by the occupation of octahedral sites by N atoms. Strain due to the lattice expansion was considered as a driving force for the hcp-fcc transformation of Ti sublattice.

Original language	English
Pages (from-to)	175-179
Number of pages	5
Journal	Thin Solid Films
Volume	464-465
DOIs	https://doi.org/10.1016/j.tsf.2004.06.053
Publication status	Published - 2004 Oct

Keywords

Fcc-hcp transformation
In-situ TEM
Ion-implantation
TiN

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.06.053

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@article{8244c446b8f048ea86b47e21d9644bb2,

title = "In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation",

abstract = "To clarify the {"}epitaxial{"} formation process of TiN films due to nitrogen-implantation, changes of crystallographic structures of as-deposited Ti films during N-implantation were studied by using a transmission electron microscope (TEM). Analysis of the results of TEM observations indicated that H atoms which constituted TiHx were completely released from as-deposited Ti films when the films were heated up to 350 °C, and that the H-released unstable fcc-Ti sublattice was transformed into hcp-structure. Ions of N2+ with 62 keV were implanted into the hcp-Ti films held at 350 °C. In the N-implanted Ti film (N/Ti=0.954), there coexisted NaCl-type TiNy and a small amount of hcp-Ti. The (001)- and (110)-oriented TiNy were {"}epitaxially{"} formed by the transformation of (03·5)- and ({\=2}1·0)-oriented hcp-Ti, respectively. The lattice of N-implanted hcp-Ti was expanded by the occupation of octahedral sites by N atoms. Strain due to the lattice expansion was considered as a driving force for the hcp-fcc transformation of Ti sublattice.",

keywords = "Fcc-hcp transformation, In-situ TEM, Ion-implantation, TiN",

author = "Wang, {J. J.} and Y. Kasukabe and T. Yamamura and S. Yamamoto and Y. Fujino",

note = "Funding Information: This work was partially supported by a Grant-in Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.",

year = "2004",

month = oct,

doi = "10.1016/j.tsf.2004.06.053",

language = "English",

volume = "464-465",

pages = "175--179",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation

AU - Wang, J. J.

AU - Kasukabe, Y.

AU - Yamamura, T.

AU - Yamamoto, S.

AU - Fujino, Y.

N1 - Funding Information: This work was partially supported by a Grant-in Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.

PY - 2004/10

Y1 - 2004/10

N2 - To clarify the "epitaxial" formation process of TiN films due to nitrogen-implantation, changes of crystallographic structures of as-deposited Ti films during N-implantation were studied by using a transmission electron microscope (TEM). Analysis of the results of TEM observations indicated that H atoms which constituted TiHx were completely released from as-deposited Ti films when the films were heated up to 350 °C, and that the H-released unstable fcc-Ti sublattice was transformed into hcp-structure. Ions of N2+ with 62 keV were implanted into the hcp-Ti films held at 350 °C. In the N-implanted Ti film (N/Ti=0.954), there coexisted NaCl-type TiNy and a small amount of hcp-Ti. The (001)- and (110)-oriented TiNy were "epitaxially" formed by the transformation of (03·5)- and (2̄1·0)-oriented hcp-Ti, respectively. The lattice of N-implanted hcp-Ti was expanded by the occupation of octahedral sites by N atoms. Strain due to the lattice expansion was considered as a driving force for the hcp-fcc transformation of Ti sublattice.

AB - To clarify the "epitaxial" formation process of TiN films due to nitrogen-implantation, changes of crystallographic structures of as-deposited Ti films during N-implantation were studied by using a transmission electron microscope (TEM). Analysis of the results of TEM observations indicated that H atoms which constituted TiHx were completely released from as-deposited Ti films when the films were heated up to 350 °C, and that the H-released unstable fcc-Ti sublattice was transformed into hcp-structure. Ions of N2+ with 62 keV were implanted into the hcp-Ti films held at 350 °C. In the N-implanted Ti film (N/Ti=0.954), there coexisted NaCl-type TiNy and a small amount of hcp-Ti. The (001)- and (110)-oriented TiNy were "epitaxially" formed by the transformation of (03·5)- and (2̄1·0)-oriented hcp-Ti, respectively. The lattice of N-implanted hcp-Ti was expanded by the occupation of octahedral sites by N atoms. Strain due to the lattice expansion was considered as a driving force for the hcp-fcc transformation of Ti sublattice.

KW - Fcc-hcp transformation

KW - In-situ TEM

KW - Ion-implantation

KW - TiN

UR - http://www.scopus.com/inward/record.url?scp=4544291067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544291067&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.06.053

DO - 10.1016/j.tsf.2004.06.053

M3 - Article

AN - SCOPUS:4544291067

SN - 0040-6090

VL - 464-465

SP - 175

EP - 179

JO - Thin Solid Films

JF - Thin Solid Films

ER -

In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation

Abstract

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