TY - JOUR
T1 - InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B, and (3 1 1)B substrates
AU - Matsukura, F.
AU - Ohno, Y.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by the “Research for the Future” Program from the Japan Society for the Promotion of Science (JSPS-RFTF97P00202) and by a Grant-in-Aid for Scientific Research on Priority Area (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan. SG thanks professor Maria C. Tamargo for helpful discussion and reading of the manuscript.
PY - 1999/5
Y1 - 1999/5
N2 - InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B and (3 1 1)B substrates have been studied. Quantum dots (QDs) were observed when InAs was grown on GaAs(1 0 0) (or (3 1 1)B). QDs with bimodal size distribution were formed when InAs was deposited on GaAs(2 1 1)B at lower growth temperatures (Ts) whereas quantum dashes (QDHs) were observed at higher Ts. (In,Mn)As QDs grown on GaAs(1 0 0) showed a broad range of dot sizes with irregular shape. (In,Mn)As QDs with bimodal size distribution were observed for the structure grown on GaAs(3 1 1)B. (In,Mn)As QDs grown on GaAs(2 1 1)B showed improved size uniformity compared to those grown on GaAs (1 0 0) and (3 1 1)B. The effects of Mn as a surfactant on InAs nanostructures were also studied.
AB - InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B and (3 1 1)B substrates have been studied. Quantum dots (QDs) were observed when InAs was grown on GaAs(1 0 0) (or (3 1 1)B). QDs with bimodal size distribution were formed when InAs was deposited on GaAs(2 1 1)B at lower growth temperatures (Ts) whereas quantum dashes (QDHs) were observed at higher Ts. (In,Mn)As QDs grown on GaAs(1 0 0) showed a broad range of dot sizes with irregular shape. (In,Mn)As QDs with bimodal size distribution were observed for the structure grown on GaAs(3 1 1)B. (In,Mn)As QDs grown on GaAs(2 1 1)B showed improved size uniformity compared to those grown on GaAs (1 0 0) and (3 1 1)B. The effects of Mn as a surfactant on InAs nanostructures were also studied.
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U2 - 10.1016/S0022-0248(98)01442-0
DO - 10.1016/S0022-0248(98)01442-0
M3 - Conference article
AN - SCOPUS:0345044928
SN - 0022-0248
VL - 201
SP - 684
EP - 688
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -