TY - GEN
T1 - InAs-based micromechanical two-dimensional electron systems
AU - Yamaguchi, H.
AU - Miyashita, S.
AU - Tokura, Y.
AU - Hirayama, Y.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - We review our recent experimental studies of InAs-based micromechanical two-dimensional electron systems. Integrating semiconductor low-dimensional structures in micromechanical cantilevers provides a stage for studying novel physics and developing new functional devices. In InAs-based systems, the Fermi level is pinned in the conduction band, which makes it easy to fabricate conductive freestanding structures, such as ultrathin freestanding Hall devices and novel displacement/force sensors based on quantum mechanical transport.
AB - We review our recent experimental studies of InAs-based micromechanical two-dimensional electron systems. Integrating semiconductor low-dimensional structures in micromechanical cantilevers provides a stage for studying novel physics and developing new functional devices. In InAs-based systems, the Fermi level is pinned in the conduction band, which makes it easy to fabricate conductive freestanding structures, such as ultrathin freestanding Hall devices and novel displacement/force sensors based on quantum mechanical transport.
UR - http://www.scopus.com/inward/record.url?scp=33749464593&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749464593&partnerID=8YFLogxK
U2 - 10.1063/1.1994566
DO - 10.1063/1.1994566
M3 - Conference contribution
AN - SCOPUS:33749464593
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 1251
EP - 1254
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -