TY - GEN
T1 - InAs-based quantum cascade light emitting structures containing a double plasmon waveguide
AU - Ohtani, K.
AU - Sakuma, H.
AU - Ohno, H.
N1 - Funding Information:
The author would like to thank Y. Ohno and F. Matsukura for helpful discussion. This work is partly supported by the Telecommunications Advancement Organization (TAO) of Japan and the Murata Science Foundation.
Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - Type-II InAs/GaSb/AlSb intersubband light emitters have a great potential over the type-I intersubband emitters because of its unique InAs/GaSb broken gap, the large optical gain and long optical phonon non-radiative relaxation time expected from the small effective mass of InAs quantum well (QW). Here we describe molecular epitaxy growth of InAs-based quantum cascade (QC) structures containing a double plasmon waveguide and its emission properties.
AB - Type-II InAs/GaSb/AlSb intersubband light emitters have a great potential over the type-I intersubband emitters because of its unique InAs/GaSb broken gap, the large optical gain and long optical phonon non-radiative relaxation time expected from the small effective mass of InAs quantum well (QW). Here we describe molecular epitaxy growth of InAs-based quantum cascade (QC) structures containing a double plasmon waveguide and its emission properties.
UR - http://www.scopus.com/inward/record.url?scp=84968593267&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84968593267&partnerID=8YFLogxK
U2 - 10.1109/MBE.2002.1037749
DO - 10.1109/MBE.2002.1037749
M3 - Conference contribution
AN - SCOPUS:84968593267
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 39
EP - 40
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -