TY - JOUR
T1 - InAs quantum cascade lasers based on coupled quantum well structures
AU - Ohtani, Keita
AU - Fujita, Kazuue
AU - Ohno, Hideo
PY - 2005/4
Y1 - 2005/4
N2 - We report the operation of mid-infrared InAs quantum cascade lasers based on coupled quantum well structures. The laser structures are grown on n-type InAs(100) substrate by solid-source molecular beam epitaxy. The resonant longitudinal optical phonon scattering is used for carrier extraction from ground state in active layers. The laser emitting around 9.1 μm in the pulse mode operates up to 160K. The observed minimum threshold current density is 3.6kA/cm2 at 80 K. We also measure the waveguide loss and compare with the design.
AB - We report the operation of mid-infrared InAs quantum cascade lasers based on coupled quantum well structures. The laser structures are grown on n-type InAs(100) substrate by solid-source molecular beam epitaxy. The resonant longitudinal optical phonon scattering is used for carrier extraction from ground state in active layers. The laser emitting around 9.1 μm in the pulse mode operates up to 160K. The observed minimum threshold current density is 3.6kA/cm2 at 80 K. We also measure the waveguide loss and compare with the design.
KW - Coupled quantum well
KW - InAs/AlGaSb
KW - Molecular beam epitaxy
KW - Quantum cascade laser
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U2 - 10.1143/JJAP.44.2572
DO - 10.1143/JJAP.44.2572
M3 - Article
AN - SCOPUS:21244441492
SN - 0021-4922
VL - 44
SP - 2572
EP - 2574
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 B
ER -