InAs quantum dot field effect transistors

G. Yusa, H. Sakaki

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


We have studied single electron and hole storage in self-assembled InAs quantum dots (QDs) embedded in GaAs/n-AlGaAs field effect transistors (QD-FETs). We prepared two types of QD-FETs. A single electron and a photo-generated single hole can be stored in each QD in Type 1. In the new Type II, single-electron discharge processes can be controlled by a surface gate voltage (Vg) as well as single-electron storage processes. We demonstrate possible application to novel photo devices and quantum dot memory devices.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalSuperlattices and Microstructures
Issue number1-2
Publication statusPublished - 1999 Jan


  • FET
  • Inas quantum dots
  • MBE


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