TY - JOUR
T1 - InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates
AU - Guo, S. P.
AU - Shen, A.
AU - Ohno, Y.
AU - Ohno, H.
N1 - Funding Information:
The authors thank Professor S. Kawakami for the use of AFM and Dr. F. Matsukura for helpful discussions. Part of this work was supported by Research for the Future Program from the Japan Society for the Promotion of Science (JSPS-RFTF97 00202) and by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan (09244103).
PY - 1998/7/15
Y1 - 1998/7/15
N2 - InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (Ts) have been investigated. QDs were observed after deposition of 2ML100 (or 4ML311) of InAs on GaAs (100) (or (311)B) at Ts ranging from 450°C to 530°C. The average density decreases and the average size increases monotonically with increasing Ts. QDs with bimodal size distribution were formed when 6ML211 of InAs was deposited on GaAs (2 1 1)B at lower Ts. When the same amount of InAs was deposited at higher Ts, however, QDHs were observed. The photoluminescence intensity of the QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence showed quite different behaviors.
AB - InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (Ts) have been investigated. QDs were observed after deposition of 2ML100 (or 4ML311) of InAs on GaAs (100) (or (311)B) at Ts ranging from 450°C to 530°C. The average density decreases and the average size increases monotonically with increasing Ts. QDs with bimodal size distribution were formed when 6ML211 of InAs was deposited on GaAs (2 1 1)B at lower Ts. When the same amount of InAs was deposited at higher Ts, however, QDHs were observed. The photoluminescence intensity of the QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence showed quite different behaviors.
KW - Molecular beam epitaxy
KW - Photoluminescence
KW - Quantum dashes
KW - Quantum dots
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U2 - 10.1016/S1386-9477(98)00137-4
DO - 10.1016/S1386-9477(98)00137-4
M3 - Article
AN - SCOPUS:0347821361
SN - 1386-9477
VL - 2
SP - 672
EP - 677
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-4
ER -