TY - GEN
T1 - InAs/AlGaSb heterostructure stress sensor for MEMS/NEMS applications
AU - Yamaguchi, H.
AU - Miyashita, S.
AU - Hirayama, Y.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - Semiconductor micro- and nano-electromechanical systems (MEMS/NEMS) have the potential to bring about a revolution in the application of semiconductor fine-structure devices, such as high-resolution actuators and sensors, high-frequency signal processing components, and medical diagnostic devices. In addition, when device size reaches the nanometer scale and the characteristic frequency becomes sufficiently high to quantize the freedom of mechanical motion, novel quantum mechanical functions can be introduced. Compared with the commonly used materials systems, such as Si/SiO2 and GaAs/AlGaAs-based heterostructures, InAs-based structures have the advantage that the surface Fermi level pinning in the conduction band makes it possible to fabricate much smaller conductive structures than other semiconductors. We have successfully fabricated a novel piezoresistive stress sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. The size of this self-sensing device can be reduced to a nanometer scale and it is expected to be a key component in future MEMS/NEMS applications.
AB - Semiconductor micro- and nano-electromechanical systems (MEMS/NEMS) have the potential to bring about a revolution in the application of semiconductor fine-structure devices, such as high-resolution actuators and sensors, high-frequency signal processing components, and medical diagnostic devices. In addition, when device size reaches the nanometer scale and the characteristic frequency becomes sufficiently high to quantize the freedom of mechanical motion, novel quantum mechanical functions can be introduced. Compared with the commonly used materials systems, such as Si/SiO2 and GaAs/AlGaAs-based heterostructures, InAs-based structures have the advantage that the surface Fermi level pinning in the conduction band makes it possible to fabricate much smaller conductive structures than other semiconductors. We have successfully fabricated a novel piezoresistive stress sensor with a surface InAs conductive layer of nanometer-scale thickness based on MBE-grown InAs/AlGaSb heterostructures. The size of this self-sensing device can be reduced to a nanometer scale and it is expected to be a key component in future MEMS/NEMS applications.
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U2 - 10.1109/MBE.2002.1037816
DO - 10.1109/MBE.2002.1037816
M3 - Conference contribution
AN - SCOPUS:84968610587
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 175
EP - 176
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -