Abstract
We report on the fabrication and characterization of 0.3-μm-thick piezoresistive cantilevers based on the InAs/AlGaSb heterostructure. The dependence of the displacement resolution on the cantilever size, which ranges from 20×10 to 2×1 μm2, has been studied by a novel characterization method using an atomic force microscope. The results show that downscaling the cantilevers improves their performances, and an optimum resolution of 0.26Å/Hz0.5 was obtained with a 3×1.5 μm2 cantilever at a modulation frequency of 714 Hz. A finite-element simulator allowed the calculation of the resonance frequencies and a maximum value of 20.5 MHz was obtained for the 3 × 1.5μm 2 cantilever.
Original language | English |
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Pages (from-to) | L424-L426 |
Journal | Japanese Journal of Applied Physics |
Volume | 43 |
Issue number | 3 B |
DOIs | |
Publication status | Published - 2004 Mar 15 |
Keywords
- AFM
- Cantilever
- InAs/AlGaSb
- Piezoresistivity
- Subangstrom