InAs/AlGaSb piezoresistive cantilever for sub-angstrom scale displacement detection

Lionel F. Houlet, Hiroshi Yamaguchi, Sen Miyashita, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We report on the fabrication and characterization of 0.3-μm-thick piezoresistive cantilevers based on the InAs/AlGaSb heterostructure. The dependence of the displacement resolution on the cantilever size, which ranges from 20×10 to 2×1 μm2, has been studied by a novel characterization method using an atomic force microscope. The results show that downscaling the cantilevers improves their performances, and an optimum resolution of 0.26Å/Hz0.5 was obtained with a 3×1.5 μm2 cantilever at a modulation frequency of 714 Hz. A finite-element simulator allowed the calculation of the resonance frequencies and a maximum value of 20.5 MHz was obtained for the 3 × 1.5μm 2 cantilever.

Original languageEnglish
Pages (from-to)L424-L426
JournalJapanese Journal of Applied Physics
Issue number3 B
Publication statusPublished - 2004 Mar 15


  • AFM
  • Cantilever
  • InAs/AlGaSb
  • Piezoresistivity
  • Subangstrom


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