We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (111)A substrates by molecular beam epitaxy. In contrast to conventionally used (001) surfaces, where Stranski-Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.
|Number of pages||8|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Issue number||3-4 SPEC. ISS.|
|Publication status||Published - 2004 Jul|
|Event||Proceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany|
Duration: 2003 Oct 13 → 2003 Oct 15