TY - GEN
T1 - Independent-double-gate FinFET SRAM technology
AU - Endo, K.
AU - O'Uchi, S.
AU - Matsukawa, T.
AU - Liu, Y.
AU - Masahara, M.
PY - 2013
Y1 - 2013
N2 - Double-gate (DG) device technology has been proposed and investigated for many years. However, there are many issues due to the aggressively scaled feature size. Variability of the device due to the various random sources is increasing and will reduce the yield of the circuit. This paper present the variability issues in the scaled FinFET. Also, we focus on the Vth controllable independent DG technology to enhance circuit performance.
AB - Double-gate (DG) device technology has been proposed and investigated for many years. However, there are many issues due to the aggressively scaled feature size. Variability of the device due to the various random sources is increasing and will reduce the yield of the circuit. This paper present the variability issues in the scaled FinFET. Also, we focus on the Vth controllable independent DG technology to enhance circuit performance.
UR - http://www.scopus.com/inward/record.url?scp=84885702013&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885702013&partnerID=8YFLogxK
U2 - 10.1149/05004.0193ecst
DO - 10.1149/05004.0193ecst
M3 - Conference contribution
AN - SCOPUS:84885702013
SN - 9781607683520
T3 - ECS Transactions
SP - 193
EP - 199
BT - Dielectric Materials and Metals for Nanoelectronics and Photonics 10
PB - Electrochemical Society Inc.
T2 - Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -