Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

Kazuhiko Endo; Shin Ichi O'uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Meishoku Masahara; Junichi Tsukada; Kenichi Ishii; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1109/ICICDT.2008.4567247

Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Meishoku Masahara, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Citations (Scopus)

Abstract

An Independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible V_th controllability. The 4T-FInFET with a TIN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the V_th of the 4T-FInFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.

Original language	English
Title of host publication	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	63-66
Number of pages	4
DOIs	https://doi.org/10.1109/ICICDT.2008.4567247
Publication status	Published - 2008
Event	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France Duration: 2008 Jun 2 → 2008 Jun 4

Publication series

Name	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Conference

Conference	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
Country/Territory	France
City	Minatec Grenoble
Period	08/6/2 → 08/6/4

Keywords

FinFET
Leakage current
SRAM
Separated gate

Access to Document

10.1109/ICICDT.2008.4567247

Cite this

Endo, K., O'uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Masahara, M., Tsukada, J., Ishii, K., Yamauchi, H., & Suzuki, E. (2008). Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 63-66). Article 4567247 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567247

@inproceedings{282c0f2610d64dc5abb65b8230be4d7f,

title = "Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction",

abstract = "An Independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FInFET with a TIN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FInFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.",

keywords = "FinFET, Leakage current, SRAM, Separated gate",

author = "Kazuhiko Endo and O'uchi, {Shin Ichi} and Yuki Ishikawa and Yongxun Liu and Takashi Matsukawa and Kunihiro Sakamoto and Meishoku Masahara and Junichi Tsukada and Kenichi Ishii and Hiromi Yamauchi and Eiichi Suzuki",

year = "2008",

doi = "10.1109/ICICDT.2008.4567247",

language = "English",

isbn = "9781424418114",

series = "Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT",

pages = "63--66",

booktitle = "Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT",

note = "IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 ; Conference date: 02-06-2008 Through 04-06-2008",

}

Endo, K, O'uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Sakamoto, K, Masahara, M, Tsukada, J, Ishii, K, Yamauchi, H & Suzuki, E 2008, Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction. in Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT., 4567247, Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 63-66, IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Minatec Grenoble, France, 08/6/2. https://doi.org/10.1109/ICICDT.2008.4567247

Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction. / Endo, Kazuhiko; O'uchi, Shin Ichi; Ishikawa, Yuki et al.
Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 63-66 4567247 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

AU - Endo, Kazuhiko

AU - O'uchi, Shin Ichi

AU - Ishikawa, Yuki

AU - Liu, Yongxun

AU - Matsukawa, Takashi

AU - Sakamoto, Kunihiro

AU - Masahara, Meishoku

AU - Tsukada, Junichi

AU - Ishii, Kenichi

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

PY - 2008

Y1 - 2008

N2 - An Independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FInFET with a TIN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FInFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.

AB - An Independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FInFET with a TIN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FInFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.

KW - FinFET

KW - Leakage current

KW - SRAM

KW - Separated gate

UR - http://www.scopus.com/inward/record.url?scp=50849103214&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50849103214&partnerID=8YFLogxK

U2 - 10.1109/ICICDT.2008.4567247

DO - 10.1109/ICICDT.2008.4567247

M3 - Conference contribution

AN - SCOPUS:50849103214

SN - 9781424418114

T3 - Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

SP - 63

EP - 66

BT - Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

T2 - IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008

Y2 - 2 June 2008 through 4 June 2008

ER -

Endo K, O'uchi SI, Ishikawa Y, Liu Y, Matsukawa T, Sakamoto K et al. Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 63-66. 4567247. (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). doi: 10.1109/ICICDT.2008.4567247

Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

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Keywords

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