@inproceedings{e77abdd6b65a435badc161ccc86dd43e,
title = "Individual cell measuring method for FeRAM retention testing",
abstract = "We propose a new testing methodology to predict the failure rate for long-term data retention of FeRAM chips. The individual retention time limit for each memory cell is determined by measuring the retention time dependence on the read signal voltage using a novel test system. From this experiment, we found that the retention time limit of each memory cell obeys a Gaussian distribution. We applied this method to the evaluation of 16 kbit FeRAM test chips, and successfully predicted the failure rates for long-term data retention time as the functions of temperature and writing voltage.",
keywords = "Ferroelectric films, Gaussian distribution, Nonvolatile memory, Random access memory, Semiconductor device measurement, System testing, Temperature, Time measurement, Voltage, Writing",
author = "N. Tanabe and H. Koike and T. Miwa and J. Yamada and A. Seike and N. Kasai and H. Toyoshima and H. Hada",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 ; Conference date: 30-04-2001 Through 03-05-2001",
year = "2001",
doi = "10.1109/RELPHY.2001.922876",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "23--27",
booktitle = "2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual",
address = "United States",
}