Industrial application of atom probe tomography to semiconductor devices

Alexander Devin Giddings, Sebastian Koelling, Yasuo Shimizu, Robert Estivill, Koji Inoue, Wilfried Vandervorst, Wai Kong Yeoh

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as such, it seems uniquely suited to meet these challenges. However, the semiconductor industry has demanding requirements against which the techniques in use are evaluated. This article explores the use of APT in the semiconductor industry, showing the potential of the technique, the obstacles that occur in practise, and possible future developments.

Original languageEnglish
Pages (from-to)82-90
Number of pages9
JournalScripta Materialia
Publication statusPublished - 2018 Apr 15


  • 3D Metrology
  • Atom probe tomography
  • Dopant engineering
  • Failure analysis
  • Semiconductor devices

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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