Influence of 3d-transition-metal additives on single crystal growth of GaN by the Na flux method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Hirokazu Iwata, Francis J. Disalvo

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

The influence of 3d-transition-metal additives (Cr, Mn, Fe, Co and Ni) on crystal growth of GaN at 750-850°C by the Na flux method was investigated. In the case of Cr addition, CrN single crystals were deposited and no significant difference in the crystal growth of GaN was found. In the case of Mn addition, growth of GaN single crystals in the -c direction was enhanced and prismatic crystals were obtained. Mn of 0.10-0.35 at.% was contained in GaN crystals. The Mn-doped GaN crystals were red or orange in color and showed Curie-like paramagnetism. Fe, Co and Ni additives also enhanced the growth of prismatic crystals. These transition-metal elements as well as Cr were not detected in the GaN crystals by inductively coupled plasma (ICP) atomic emission spectroscopy. Colorless transparent prismatic crystals having 1.5 mm length were prepared using the Ni additive.

Original languageEnglish
Pages (from-to)5445-5449
Number of pages5
JournalJapanese Journal of Applied Physics
Volume42
Issue number9 A
DOIs
Publication statusPublished - 2003 Sept

Keywords

  • Additive
  • Flux growth
  • GaN
  • Magnetic property
  • Morphology
  • Single crystal

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