Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system

Mykhailo Chundak; Michiko Yoshitake; Michal Vaclavu; Vladimir Matolin; Toyohiro Chikyow

doi:10.1007/s10008-016-3400-7

Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO₂ system

Mykhailo Chundak, Michiko Yoshitake, Michal Vaclavu, Vladimir Matolin, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO₂(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO₂ interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.

Original language	English
Pages (from-to)	657-664
Number of pages	8
Journal	Journal of Solid State Electrochemistry
Volume	21
Issue number	3
DOIs	https://doi.org/10.1007/s10008-016-3400-7
Publication status	Published - 2017 Mar 1
Externally published	Yes

Keywords

AFM
Ceria
Epitaxial
Pt
ReRAM
XPS

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1007/s10008-016-3400-7

Cite this

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title = "Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system",

abstract = "We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO2(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO2 interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.",

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author = "Mykhailo Chundak and Michiko Yoshitake and Michal Vaclavu and Vladimir Matolin and Toyohiro Chikyow",

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T1 - Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system

AU - Chundak, Mykhailo

AU - Yoshitake, Michiko

AU - Vaclavu, Michal

AU - Matolin, Vladimir

AU - Chikyow, Toyohiro

PY - 2017/3/1

Y1 - 2017/3/1

N2 - We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO2(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO2 interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.

AB - We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO2(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO2 interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.

KW - AFM

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KW - Epitaxial

KW - Pt

KW - ReRAM

KW - XPS

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